KNF4660A
MOSFET. Datasheet pdf. Equivalent
Type Designator: KNF4660A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 42
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 19
nC
trⓘ - Rise Time: 11
nS
Cossⓘ -
Output Capacitance: 90
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.25
Ohm
Package:
TO220F
KNF4660A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KNF4660A
Datasheet (PDF)
..1. Size:332K kia
knf4660a.pdf
7A600VN-CHANNELMOSFETKNX4660AKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. DescriptionTheKNX4660A-Channel enhancement modesilicongatepower MOSFETis designedfor highvoltage,high speed power switching applications such as high efficiency switched mode power supplies, activepower factor correction, electronic lamp ballasts based on half bridge topology.2. Featu
8.1. Size:277K kia
knd4665b knf4665b.pdf
7A650VN-CHANNELMOSFETKNX4665BKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. DescriptionTheKNX4665B-Channel enhancement modesilicongatepower MOSFETis designedfor highvoltage,high speed power switching applications such as high efficiency switched mode power supplies, activepower factor correction, electronic lamp ballasts based on half bridge topology2. Featur
8.2. Size:269K kia
knf4665a knp4665a.pdf
7.5A650VN-CHANNELMOSFET4665AKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. General DescriptionThis Power MOSFETis producedusing KIAs advanced planar stripeDMOStechnology. This advancedtechnology has been especially tailored to minimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in the avalanche and commutationmod
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