KNF6140A
MOSFET. Datasheet pdf. Equivalent
Type Designator: KNF6140A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 45
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 10
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 28
nC
trⓘ - Rise Time: 25
nS
Cossⓘ -
Output Capacitance: 150
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.5
Ohm
Package:
TO220F
KNF6140A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KNF6140A
Datasheet (PDF)
..1. Size:489K kia
knp6140a knf6140a.pdf
10A400V6140AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.General Features Proprietary NewPlanar Technology R =0.35@V =10VDS(ON),typ. GS LowGate Charge Minimize Switching Loss Fast Recovery Body Diode2.Applications Ballast and Lighting DC-ACInverter Other Applications3. PinconfigurationPin Function1 Gate2 Drain3 Source4
9.1. Size:773K kia
knp6180a knf6180a.pdf
10A800VKNX6180AN-CHANNEL MOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.General Features Proprietary New Planar Technology R =1.0 @V =10VDS(ON),typ. GS Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode2.Applications ATX Power LCD Panel Power3. Pin configurationPin Function1 Gate2 Drain3 Source4 Drain
9.2. Size:1562K kia
knp6165b knf6165b.pdf
10A650VKNX6165BN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features RoHSCompliant R ,typ.=0.75 @V =10VDS(ON) GS LowGate Charge Minimize Switching Loss Fast Recovery Body Diode2. Applications Adaptor Charger SMPSStandby Power3. PinconfigurationPin Function1 Gate2 Drain3 Source4 Drain1 of 9 Rev 1.0. May. 201910A
9.3. Size:178K kia
knf6165a knp6165a.pdf
10A650VN-CHANNELMOSFETKNX6165AKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. DescriptionTheKNX6165A-Channel enhancement modesilicongatepower MOSFETis designedfor highvoltage,high speed power switching applications such as high efficiency switched mode power supplies, activepower factor correction, electronic lamp ballasts based on half bridge topology2. Featu
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