JCS12N60BT Datasheet: MOSFET, N-Ch, 600V, 12A. Full specification with pinout and replacement list

JCS12N60BT Datasheet. Specs and Replacement

Type Designator: JCS12N60BT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 133 nS

Cossⓘ - Output Capacitance: 175 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm

Package: TO-262

JCS12N60BT substitution

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JCS12N60BT datasheet

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jcs12n60ct jcs12n60ft jcs12n60st jcs12n60bt.pdf pdf_icon

N R N-CHANNEL MOSFET JCS12N60T Package MAIN CHARACTERISTICS ID 12.0A VDSS 600 V Rdson-max 0.65 @Vgs=10V Qg 39 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge L... See More ⇒

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jcs12n65t.pdf pdf_icon

N R N-CHANNEL MOSFET JCS12N65T Package MAIN CHARACTERISTICS ID 12 A VDSS 650 V Rdson @Vgs=10V 0.78 Qg 39 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS FEA... See More ⇒

7.2. Size:1489K jilin sino
jcs12n65fei jcs12n65bei jcs12n65sei jcs12n65cei.pdf pdf_icon

N R N-CHANNEL MOSFET JCS12N65EI Package MAIN CHARACTERISTICS ID 12A VDSS 650V Rdson-max 0.9 Vgs=10V Qg-Typ 30nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LE... See More ⇒