STH65N06 Specs and Replacement
Type Designator: STH65N06
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 65 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 550 nS
Cossⓘ - Output Capacitance: 950 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: TO218
STH65N06 substitution
- MOSFET ⓘ Cross-Reference Search
STH65N06 datasheet
Detailed specifications: STH55N10 , STH55N10FI , STH5N90 , STH5N90FI , STH60N10 , STH60N10FI , STH65N05 , STH65N05FI , P60NF06 , STH65N06FI , STH6N100 , STH6N100FI , STH6NA80 , STH6NA80FI , STH75N06 , STH75N06FI , STH7N90 .
History: STH4N90FI
Keywords - STH65N06 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: STH4N90FI
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