All MOSFET. JCS19N20C Datasheet

 

JCS19N20C Datasheet and Replacement


   Type Designator: JCS19N20C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 104 nS
   Cossⓘ - Output Capacitance: 181 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO-220C
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JCS19N20C Datasheet (PDF)

 ..1. Size:1386K  jilin sino
 jcs19n20c jcs19n20f.pdf pdf_icon

JCS19N20C

N N- CHANNEL MOSFET R JCS19N20 MAIN CHARACTERISTICS Package ID 18.0A VDSS 200 V Rdson-max 0.18 @Vgs=10V Qg-typ 47nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge

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History: IRFI7536G | WMM11N80M3 | FDMS9620S

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