All MOSFET. JCS19N20F Datasheet

 

JCS19N20F MOSFET. Datasheet pdf. Equivalent


   Type Designator: JCS19N20F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 44 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 47 nC
   trⓘ - Rise Time: 104 nS
   Cossⓘ - Output Capacitance: 181 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO-220MF

 JCS19N20F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JCS19N20F Datasheet (PDF)

 ..1. Size:1386K  jilin sino
 jcs19n20c jcs19n20f.pdf

JCS19N20F JCS19N20F

N N- CHANNEL MOSFET R JCS19N20 MAIN CHARACTERISTICS Package ID 18.0A VDSS 200 V Rdson-max 0.18 @Vgs=10V Qg-typ 47nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: HGT016NE6A | NCEP023N85D | IRFB5615PBF

 

 
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