All MOSFET. JCS19N20F Datasheet

 

JCS19N20F Datasheet and Replacement


   Type Designator: JCS19N20F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 44 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 104 nS
   Cossⓘ - Output Capacitance: 181 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO-220MF
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JCS19N20F Datasheet (PDF)

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 jcs19n20c jcs19n20f.pdf pdf_icon

JCS19N20F

N N- CHANNEL MOSFET R JCS19N20 MAIN CHARACTERISTICS Package ID 18.0A VDSS 200 V Rdson-max 0.18 @Vgs=10V Qg-typ 47nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge

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History: SM6026NSKP | RJK1525DPE | APM4050PU | AOD454 | WMB56N04T1 | TPCP8007-H | AP6980GN2-HF

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