All MOSFET. JCS1SN60VC Datasheet

 

JCS1SN60VC Datasheet and Replacement


   Type Designator: JCS1SN60VC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 23 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm
   Package: TO251
 

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JCS1SN60VC Datasheet (PDF)

 ..1. Size:733K  jilin sino
 jcs1sn60tc jcs1sn60vc jcs1sn60rc.pdf pdf_icon

JCS1SN60VC

N RN-CHANNEL MOSFET JCS1SN60C MAIN CHARACTERISTICS 0.6A TO-92 ID 1.2 A IPAK/DPKA Package VDSS 600 V Rdson-max 8.5 Vgs=10V Qg-typ 4.5nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge

Datasheet: JCS15N70F , JCS160N08 , JCS160N08I , JCS19N20C , JCS19N20F , JCS1N70TC , JCS1SN60RC , JCS1SN60TC , AO3401 , JCS20N60FH , JCS20N65FH , JCS20N65WH , JCS2N60CB , JCS2N60FB , JCS2N60MB , JCS2N60MF , JCS2N60MFB .

History: HYG023N03LR1U | 18N20

Keywords - JCS1SN60VC MOSFET datasheet

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