All MOSFET. JCS1SN60VC Datasheet

 

JCS1SN60VC MOSFET. Datasheet pdf. Equivalent


   Type Designator: JCS1SN60VC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 1.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.5 nC
   trⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 23 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm
   Package: TO251

 JCS1SN60VC Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JCS1SN60VC Datasheet (PDF)

 ..1. Size:733K  jilin sino
 jcs1sn60tc jcs1sn60vc jcs1sn60rc.pdf

JCS1SN60VC JCS1SN60VC

N RN-CHANNEL MOSFET JCS1SN60C MAIN CHARACTERISTICS 0.6A TO-92 ID 1.2 A IPAK/DPKA Package VDSS 600 V Rdson-max 8.5 Vgs=10V Qg-typ 4.5nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge

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History: STW70N10F4 | IRFH5406PBF | ELM34604AA | CHM3U22VESGP | AM5480N

 

 
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