JCS20N65FH
MOSFET. Datasheet pdf. Equivalent
Type Designator: JCS20N65FH
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 62.2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 20
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 45
nC
trⓘ - Rise Time: 140
nS
Cossⓘ -
Output Capacitance: 250
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.5
Ohm
Package:
TO-220MF
JCS20N65FH
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
JCS20N65FH
Datasheet (PDF)
..1. Size:826K jilin sino
jcs20n65fh jcs20n65wh.pdf
N RN-CHANNEL MOSFET JCS20N65H MAIN CHARACTERISTICS Package ID 20A VDSS 650 V Rdson-max 0.5 @Vgs=10V Qg-typ 45nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply
5.1. Size:806K jilin sino
jcs20n65fei.pdf
N RN-CHANNEL MOSFETJCS20N65EI Package MAIN CHARACTERISTICS ID 20A VDSS 650V Rdson-max0.42 Vgs=10V Qg-Typ 64.6nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power
7.1. Size:1458K jilin sino
jcs20n60wh.pdf
N N- CHANNEL MOSFET RJCS20N60WH MAIN CHARACTERISTICS Package ID 20 A VDSS 600 V Rdson@Vgs=10V 0.39 Qg 50nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS
7.2. Size:1215K jilin sino
jcs20n60fh.pdf
N RN-CHANNEL MOSFET JCS20N60FH Package MAIN CHARACTERISTICS ID 20A VDSS 600V Rdson-max 0.39 Vgs=10V Qg-Typ 50nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LE
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