STH6N100FI PDF and Equivalents Search

 

STH6N100FI Specs and Replacement

Type Designator: STH6N100FI

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 210 nS

Cossⓘ - Output Capacitance: 260 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: ISOWATT218

STH6N100FI substitution

- MOSFET ⓘ Cross-Reference Search

 

STH6N100FI datasheet

 6.1. Size:365K  st
 sth6n100.pdf pdf_icon

STH6N100FI

STH6N100 STH6N100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STH6N100 1000 V ... See More ⇒

 9.1. Size:346K  1
 sth6na80 sth6na80fi.pdf pdf_icon

STH6N100FI

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 9.2. Size:706K  st
 sth6n95k5-2.pdf pdf_icon

STH6N100FI

STH6N95K5-2 N-channel 950 V, 1 typ., 6 A MDmesh K5 Power MOSFET in a H PAK-2 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STH6N95K5-2 950 V 1.25 6 A 110 W Industry s lowest R x area DS(on) Industry s best figure of merit (FoM) Ultra low gate charge 100% avalanche tested Zener-protected Applicati... See More ⇒

Detailed specifications: STH5N90FI , STH60N10 , STH60N10FI , STH65N05 , STH65N05FI , STH65N06 , STH65N06FI , STH6N100 , IRFB31N20D , STH6NA80 , STH6NA80FI , STH75N06 , STH75N06FI , STH7N90 , STH7N90FI , STH7NA60 , STH7NA60FI .

Keywords - STH6N100FI MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 


 
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