All MOSFET. STH6N100FI Datasheet

 

STH6N100FI Datasheet and Replacement


   Type Designator: STH6N100FI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 3.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 125 nC
   tr ⓘ - Rise Time: 210 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: ISOWATT218
 

 STH6N100FI substitution

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STH6N100FI Datasheet (PDF)

 6.1. Size:365K  st
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STH6N100FI

STH6N100STH6N100FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTH6N100 1000 V

 9.1. Size:346K  1
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STH6N100FI

 9.2. Size:706K  st
 sth6n95k5-2.pdf pdf_icon

STH6N100FI

STH6N95K5-2 N-channel 950 V, 1 typ., 6 A MDmesh K5 Power MOSFET in a HPAK-2 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTH6N95K5-2 950 V 1.25 6 A 110 W Industrys lowest R x area DS(on) Industrys best figure of merit (FoM) Ultra low gate charge 100% avalanche tested Zener-protected Applicati

Datasheet: STH5N90FI , STH60N10 , STH60N10FI , STH65N05 , STH65N05FI , STH65N06 , STH65N06FI , STH6N100 , IRF730 , STH6NA80 , STH6NA80FI , STH75N06 , STH75N06FI , STH7N90 , STH7N90FI , STH7NA60 , STH7NA60FI .

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