STH6NA80FI Datasheet and Replacement
Type Designator: STH6NA80FI
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 3.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 140 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
Package: ISOWATT218
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STH6NA80FI Datasheet (PDF)
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History: SFI9Z24 | FM200TU-2A | IXTP16N50PM | STP2N60FI | IXTV30N50PS | DMN3730U | 2SK566
Keywords - STH6NA80FI MOSFET datasheet
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History: SFI9Z24 | FM200TU-2A | IXTP16N50PM | STP2N60FI | IXTV30N50PS | DMN3730U | 2SK566
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