All MOSFET. JCS4N60SB Datasheet

 

JCS4N60SB MOSFET. Datasheet pdf. Equivalent


   Type Designator: JCS4N60SB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 193.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13.3 nC
   trⓘ - Rise Time: 23.7 nS
   Cossⓘ - Output Capacitance: 89 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: TO-263

 JCS4N60SB Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JCS4N60SB Datasheet (PDF)

 ..1. Size:1045K  jilin sino
jcs4n60vb jcs4n60rb jcs4n60bb jcs4n60sb jcs4n60cb jcs4n60fb.pdf

JCS4N60SB JCS4N60SB

N RN-CHANNEL MOSFET JCS4N60B Package MAIN CHARACTERISTICS ID 4.0 A VDSS 600 V 2.4 RdsonVgs=10VQg 18.1nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power su

 7.1. Size:1019K  1
jcs4n60vb jcs4n60rb jcs4n60bb jcs4n60cb jcs4n60fb.pdf

JCS4N60SB JCS4N60SB

N RN-CHANNEL MOSFETJCS4N60B Package MAIN CHARACTERISTICS 4.0 A ID 600 V VDSS RdsonVgs=10V 2.4 13.3nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS

 7.2. Size:1304K  jilin sino
jcs4n60v jcs4n60c jcs4n60f jcs4n60r jcs4n60b.pdf

JCS4N60SB JCS4N60SB

N RN-CHANNEL MOSFET JCS4N60C MAIN CHARACTERISTICS Package ID 4.0 A VDSS 600 V Rdson Typ 2.0 Vgs=10V Max 2.5 Qg-typ 17.5nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

 7.3. Size:1259K  jilin sino
jcs4n60f jcs4n60f jcs4n60v jcs4n60r jcs4n60b.pdf

JCS4N60SB JCS4N60SB

R JCS4N60E JCS4N60E MAIN CHARACTERISTICS Package ID 4.0 A VDSS 600 V Rdson_max 2.35 Vgs=10V Qg-typ 11.8nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATURES Low

 7.4. Size:948K  jilin sino
jcs4n60f.pdf

JCS4N60SB JCS4N60SB

N lSX:_W:WHe^vfSO{RN-CHANNEL MOSFETJCS4N60 \ Package ;NSpe MAIN CHARACTERISTICS 4.0 A ID 600 V VDSS Rdson 2.5 @Vgs=10V27 nC Qg APPLICATIONS (u High efficiency switch

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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