JCS4N65M Datasheet: MOSFET, N-Ch, 650V, 4A. Full specification with pinout and replacement list

JCS4N65M Datasheet. Specs and Replacement

Type Designator: JCS4N65M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 122 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 62 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm

Package: TO-126

JCS4N65M substitution

- MOSFET ⓘ Cross-Reference Search

JCS4N65M datasheet

..1. Size:1447K jilin sino
jcs4n65f jcs4n65v jcs4n65r jcs4n65b jcs4n65m jcs4n65mf.pdf pdf_icon

R JCS4N65E JCS4N65E MAIN CHARACTERISTICS Package ID 4.0 A VDSS 650 V Rdson_max 2.5 Vgs=10V Qg-typ 11.9nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATURES Low gate ... See More ⇒

..2. Size:1866K jilin sino
jcs4n65v jcs4n65r jcs4n65c jcs4n65f jcs4n65b jcs4n65m jcs4n65mf.pdf pdf_icon

R JCS4N65C JCS4N65C MAIN CHARACTERISTICS Package ID 4.0 A VDSS 650 V Rdson_ Typ 2.1 Vgs=1 Max 2.6 0V Qg-typ 14nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATURES Low g... See More ⇒

7.1. Size:831K jilin sino
jcs4n65vb jcs4n65rb jcs4n65cb jcs4n65fb.pdf pdf_icon

N R N-CHANNEL MOSFET JCS4N65B Package MAIN CHARACTERISTICS 4.0 A ID 650 V VDSS Rdson 2.5 @Vgs=10V 13.3nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS ... See More ⇒

7.2. Size:779K jilin sino
jcs4n65f-c-r-v.pdf pdf_icon