All MOSFET. JCS4N65VB Datasheet

 

JCS4N65VB MOSFET. Datasheet pdf. Equivalent


   Type Designator: JCS4N65VB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 117.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 16.3 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 72.5 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: TO251-S1

 JCS4N65VB Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JCS4N65VB Datasheet (PDF)

 ..1. Size:831K  jilin sino
 jcs4n65vb jcs4n65rb jcs4n65cb jcs4n65fb.pdf

JCS4N65VB JCS4N65VB

N RN-CHANNEL MOSFETJCS4N65B Package MAIN CHARACTERISTICS 4.0 A ID 650 V VDSS Rdson 2.5 @Vgs=10V13.3nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS

 ..2. Size:1598K  jilin sino
 jcs4n65vb jcs4n65rb jcs4n65bb jcs4n65sb jcs4n65cb jcs4n65fb.pdf

JCS4N65VB JCS4N65VB

N RN-CHANNEL MOSFET JCS4N65B Package MAIN CHARACTERISTICS ID 4.0 A VDSS 650 V RdsonVgs=10V 2.4 -Max Qg-Typ 16.3nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UP

 6.1. Size:1447K  jilin sino
 jcs4n65f jcs4n65v jcs4n65r jcs4n65b jcs4n65m jcs4n65mf.pdf

JCS4N65VB JCS4N65VB

R JCS4N65E JCS4N65E MAIN CHARACTERISTICS Package ID 4.0 A VDSS 650 V Rdson_max 2.5 Vgs=10V Qg-typ 11.9nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATURES Low gate

 6.2. Size:1866K  jilin sino
 jcs4n65v jcs4n65r jcs4n65c jcs4n65f jcs4n65b jcs4n65m jcs4n65mf.pdf

JCS4N65VB JCS4N65VB

RJCS4N65C JCS4N65C MAIN CHARACTERISTICS Package ID 4.0 A VDSS 650 V Rdson_Typ 2.1 Vgs=1Max 2.6 0V Qg-typ 14nC APPLICATIONS High frequency switchingmode power supply Electronic ballastLED LED power supply FEATURES Low g

 7.1. Size:779K  jilin sino
 jcs4n65f-c-r-v.pdf

JCS4N65VB JCS4N65VB

N lSX:_W:WHe^vfSO{RN-CHANNEL MOSFETJCS4N65C \ Package ;NSpe MAIN CHARACTERISTICS 4.0 A ID 650 V VDSS RdsonVgs=10V 2.5 9nC Qg APPLICATIONS (u High frequency switching

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: NCEP050N12AGU

 

 
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