STH7N90 Specs and Replacement
Type Designator: STH7N90
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 280 nS
Cossⓘ - Output Capacitance: 270 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO218
STH7N90 substitution
STH7N90 datasheet
sth7na80fi stw7na80.pdf
STW7NA80 STH7NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STW7NA80 800 V ... See More ⇒
Detailed specifications: STH65N06 , STH65N06FI , STH6N100 , STH6N100FI , STH6NA80 , STH6NA80FI , STH75N06 , STH75N06FI , IRFZ46N , STH7N90FI , STH7NA60 , STH7NA60FI , STH7NA80 , STH7NA80FI , STH80N05 , STH80N05FI , STH8N80 .
History: IRFY120 | AGM16N10C | TK8P60W5
Keywords - STH7N90 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: IRFY120 | AGM16N10C | TK8P60W5
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