All MOSFET. STH7N90FI Datasheet

 

STH7N90FI Datasheet and Replacement


   Type Designator: STH7N90FI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 280 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: ISOWATT218
 

 STH7N90FI substitution

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STH7N90FI Datasheet (PDF)

 ..1. Size:326K  1
 sth7n90 sth7n90fi.pdf pdf_icon

STH7N90FI

 9.1. Size:346K  1
 sth7na60 sth7na60fi.pdf pdf_icon

STH7N90FI

 9.2. Size:132K  1
 sth7na80fi stw7na80.pdf pdf_icon

STH7N90FI

STW7NA80STH7NA80FI N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTW7NA80 800 V

 9.3. Size:340K  1
 sth7na80 sth7na80fi.pdf pdf_icon

STH7N90FI

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Datasheet: STH65N06FI , STH6N100 , STH6N100FI , STH6NA80 , STH6NA80FI , STH75N06 , STH75N06FI , STH7N90 , IRF1405 , STH7NA60 , STH7NA60FI , STH7NA80 , STH7NA80FI , STH80N05 , STH80N05FI , STH8N80 , STH8N80FI .

History: STS6604L

Keywords - STH7N90FI MOSFET datasheet

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