All MOSFET. JCS640C Datasheet

 

JCS640C Datasheet and Replacement


   Type Designator: JCS640C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 104 nS
   Cossⓘ - Output Capacitance: 181 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO-220C
 

 JCS640C substitution

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JCS640C Datasheet (PDF)

 ..1. Size:1439K  jilin sino
 jcs640s jcs640c jcs640f.pdf pdf_icon

JCS640C

N N- CHANNEL MOSFET R JCS640 MAIN CHARACTERISTICS Package ID 18.0A VDSS 200 V Rdson-max 0.18 @Vgs=10V Qg-typ 47nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge

 0.1. Size:1405K  jilin sino
 jcs640vh jcs640rh jcs640ch jcs640fh.pdf pdf_icon

JCS640C

N N- CHANNEL MOSFET R JCS640H MAIN CHARACTERISTICS Package ID 18A VDSS 200 V Rdson-max 0.15 @Vgs=10V Qg-typ 27.5nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge

 0.2. Size:1803K  jilin sino
 jcs640vh jcs640rh jcs640ch jcs640fh jcs640sh.pdf pdf_icon

JCS640C

N N- CHANNEL MOSFET R JCS640H MAIN CHARACTERISTICS Package ID 18A VDSS 200 V Rdson-max 0.15 @Vgs=10V Qg-typ 27.5nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge

Datasheet: JCS5N60VB , JCS5N65FB , JCS630BA , JCS630CA , JCS630FA , JCS630RA , JCS630SA , JCS630VA , IRF530 , JCS640CH , JCS640F , JCS640FH , JCS640RH , JCS640S , JCS640VH , JCS6N70B , JCS6N70C .

History: IRFZ44RPBF | BL20N50-P

Keywords - JCS640C MOSFET datasheet

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