All MOSFET. STH7NA60FI Datasheet

 

STH7NA60FI Datasheet and Replacement


   Type Designator: STH7NA60FI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.75 V
   |Id| ⓘ - Maximum Drain Current: 4.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 54 nC
   tr ⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 155 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: ISOWATT218
 

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STH7NA60FI Datasheet (PDF)

 ..1. Size:346K  1
 sth7na60 sth7na60fi.pdf pdf_icon

STH7NA60FI

 8.1. Size:132K  1
 sth7na80fi stw7na80.pdf pdf_icon

STH7NA60FI

STW7NA80STH7NA80FI N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTW7NA80 800 V

 8.2. Size:340K  1
 sth7na80 sth7na80fi.pdf pdf_icon

STH7NA60FI

 8.3. Size:106K  st
 sth7na90fi stw7na90.pdf pdf_icon

STH7NA60FI

STW7NA90STH7NA90FI N - CHANNEL 900V - 1.05 - 7A - TO-247/ISOWATT218FAST POWER MOSFETTYPE VDSS RDS(on) IDSTW7NA90 900 V

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Keywords - STH7NA60FI MOSFET datasheet

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