All MOSFET. JCS640VH Datasheet

 

JCS640VH MOSFET. Datasheet pdf. Equivalent


   Type Designator: JCS640VH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 27.5 nC
   trⓘ - Rise Time: 38.7 nS
   Cossⓘ - Output Capacitance: 173 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: TO251

 JCS640VH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JCS640VH Datasheet (PDF)

 ..1. Size:1405K  jilin sino
 jcs640vh jcs640rh jcs640ch jcs640fh.pdf

JCS640VH JCS640VH

N N- CHANNEL MOSFET R JCS640H MAIN CHARACTERISTICS Package ID 18A VDSS 200 V Rdson-max 0.15 @Vgs=10V Qg-typ 27.5nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge

 ..2. Size:1803K  jilin sino
 jcs640vh jcs640rh jcs640ch jcs640fh jcs640sh.pdf

JCS640VH JCS640VH

N N- CHANNEL MOSFET R JCS640H MAIN CHARACTERISTICS Package ID 18A VDSS 200 V Rdson-max 0.15 @Vgs=10V Qg-typ 27.5nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge

 8.1. Size:1439K  jilin sino
 jcs640s jcs640c jcs640f.pdf

JCS640VH JCS640VH

N N- CHANNEL MOSFET R JCS640 MAIN CHARACTERISTICS Package ID 18.0A VDSS 200 V Rdson-max 0.18 @Vgs=10V Qg-typ 47nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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