All MOSFET. STH7NA80FI Datasheet

 

STH7NA80FI Datasheet and Replacement


   Type Designator: STH7NA80FI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 95 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm
   Package: ISOWATT218
 

 STH7NA80FI substitution

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STH7NA80FI Datasheet (PDF)

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STH7NA80FI

STW7NA80STH7NA80FI N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTW7NA80 800 V

 ..2. Size:340K  1
 sth7na80 sth7na80fi.pdf pdf_icon

STH7NA80FI

 8.1. Size:346K  1
 sth7na60 sth7na60fi.pdf pdf_icon

STH7NA80FI

 8.2. Size:106K  st
 sth7na90fi stw7na90.pdf pdf_icon

STH7NA80FI

STW7NA90STH7NA90FI N - CHANNEL 900V - 1.05 - 7A - TO-247/ISOWATT218FAST POWER MOSFETTYPE VDSS RDS(on) IDSTW7NA90 900 V

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Datasheet: STH6NA80FI , STH75N06 , STH75N06FI , STH7N90 , STH7N90FI , STH7NA60 , STH7NA60FI , STH7NA80 , HY1906P , STH80N05 , STH80N05FI , STH8N80 , STH8N80FI , STH8NA60 , STH8NA60FI , STH9N80 , STH9N80FI .

History: VBZM20P06

Keywords - STH7NA80FI MOSFET datasheet

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