STH7NA80FI Specs and Replacement
Type Designator: STH7NA80FI
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 3.75 V
Qg ⓘ - Total Gate Charge: 58 nC
tr ⓘ - Rise Time: 95 nS
Cossⓘ - Output Capacitance: 160 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm
Package: ISOWATT218
STH7NA80FI substitution
- MOSFET ⓘ Cross-Reference Search
STH7NA80FI datasheet
sth7na80fi stw7na80.pdf
STW7NA80 STH7NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STW7NA80 800 V ... See More ⇒
sth7na90fi stw7na90.pdf
STW7NA90 STH7NA90FI N - CHANNEL 900V - 1.05 - 7A - TO-247/ISOWATT218 FAST POWER MOSFET TYPE VDSS RDS(on) ID STW7NA90 900 V ... See More ⇒
Detailed specifications: STH6NA80FI , STH75N06 , STH75N06FI , STH7N90 , STH7N90FI , STH7NA60 , STH7NA60FI , STH7NA80 , AON7403 , STH80N05 , STH80N05FI , STH8N80 , STH8N80FI , STH8NA60 , STH8NA60FI , STH9N80 , STH9N80FI .
Keywords - STH7NA80FI MOSFET specs
STH7NA80FI cross reference
STH7NA80FI equivalent finder
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STH7NA80FI replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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