STH80N05 Datasheet and Replacement
Type Designator: STH80N05
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 130 nC
tr ⓘ - Rise Time: 900 nS
Cossⓘ - Output Capacitance: 1800 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TO218
STH80N05 substitution
STH80N05 Datasheet (PDF)
sth80n10lf7-2ag.pdf

STH80N10LF7-2AGDatasheetAutomotive-grade N-channel 100 V, 7 m typ., 80 A, STripFET F7 Power MOSFET in an H2PAK-2 packageFeaturesTABVDS RDS(on) max. ID PTOTOrder codeSTH80N10LF7-2AG 100 V 10 m 80 A 110 W231 AEC-Q101 qualified Among the lowest RDS(on) on the marketH2PAK-2 Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunityD(TA
std80n10f7 stf80n10f7 sth80n10f7-2 stp80n10f7.pdf

STD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7N-channel 100 V, 0.008 typ., 80 A STripFET VII DeepGATE Power MOSFETs in DPAK, TO-220FP, H2PAK-2 and TO-220Datasheet - production dataFeaturesTABVDS @ RDS(on) 3Order codes ID PTOTTJmax max1DPAK 3STD80N10F7 0.01 70 A 85 W21TO-220FP STF80N10F7 0.01 40 A 30 W100 VTABTAB STH80N10F7-2 0.0095 80 A
sth80n10lf7.pdf

isc N-Channel MOSFET Transistor STH80N10LF7FEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 10m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
Datasheet: STH75N06 , STH75N06FI , STH7N90 , STH7N90FI , STH7NA60 , STH7NA60FI , STH7NA80 , STH7NA80FI , IRF9640 , STH80N05FI , STH8N80 , STH8N80FI , STH8NA60 , STH8NA60FI , STH9N80 , STH9N80FI , STH9NA60 .
Keywords - STH80N05 MOSFET datasheet
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History: AP9T15GJ | 14N50



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