STH80N05 Specs and Replacement
Type Designator: STH80N05
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 900 nS
Cossⓘ - Output Capacitance: 1800 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TO218
STH80N05 substitution
- MOSFET ⓘ Cross-Reference Search
STH80N05 datasheet
sth80n10lf7-2ag.pdf
STH80N10LF7-2AG Datasheet Automotive-grade N-channel 100 V, 7 m typ., 80 A, STripFET F7 Power MOSFET in an H2PAK-2 package Features TAB VDS RDS(on) max. ID PTOT Order code STH80N10LF7-2AG 100 V 10 m 80 A 110 W 2 3 1 AEC-Q101 qualified Among the lowest RDS(on) on the market H2PAK-2 Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity D(TA... See More ⇒
std80n10f7 stf80n10f7 sth80n10f7-2 stp80n10f7.pdf
STD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7 N-channel 100 V, 0.008 typ., 80 A STripFET VII DeepGATE Power MOSFETs in DPAK, TO-220FP, H2PAK-2 and TO-220 Datasheet - production data Features TAB VDS @ RDS(on) 3 Order codes ID PTOT TJmax max 1 DPAK 3 STD80N10F7 0.01 70 A 85 W 2 1 TO-220FP STF80N10F7 0.01 40 A 30 W 100 V TAB TAB STH80N10F7-2 0.0095 80 A... See More ⇒
sth80n10lf7.pdf
isc N-Channel MOSFET Transistor STH80N10LF7 FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 10m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ... See More ⇒
Detailed specifications: STH75N06 , STH75N06FI , STH7N90 , STH7N90FI , STH7NA60 , STH7NA60FI , STH7NA80 , STH7NA80FI , K2611 , STH80N05FI , STH8N80 , STH8N80FI , STH8NA60 , STH8NA60FI , STH9N80 , STH9N80FI , STH9NA60 .
Keywords - STH80N05 MOSFET specs
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