All MOSFET. JCS7HN60F Datasheet

 

JCS7HN60F Datasheet and Replacement


   Type Designator: JCS7HN60F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 251 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
   Package: TO-220MF
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JCS7HN60F Datasheet (PDF)

 ..1. Size:1818K  jilin sino
 jcs7hn60v jcs7hn60r jcs7hn60b jcs7hn60s jcs7hn60c jcs7hn60f.pdf pdf_icon

JCS7HN60F

N RN-CHANNEL MOSFET JCS7HN60C MAIN CHARACTERISTICS Package ID 7.0 A VDSS 600 V Rdson-max 1.3 @Vgs=10V Qg-typ 32 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

 7.1. Size:1900K  jilin sino
 jcs7hn65v jcs7hn65r jcs7hn65b jcs7hn65s jcs7hn65c jcs7hn65f.pdf pdf_icon

JCS7HN60F

N RN-CHANNEL MOSFET JCS7HN65C MAIN CHARACTERISTICS Package ID 7.0 A VDSS 650 V Rdson-max Typ 1.05 Vgs=10V Max 1.35 Qg-typ 32 nC APPLICATIONS High frequency switching mode power supply LED Electronic ballast LED po

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History: SSM9980GH | SRT10N160LD | NCE30P12BS | APT10021JFLL | NP180N04TUJ | SSW65R190S2 | SM4186T9RL

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