JCS7HN65B MOSFET. Datasheet pdf. Equivalent
Type Designator: JCS7HN65B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 32 nC
trⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 251 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.35 Ohm
Package: TO-262
JCS7HN65B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
JCS7HN65B Datasheet (PDF)
jcs7hn65v jcs7hn65r jcs7hn65b jcs7hn65s jcs7hn65c jcs7hn65f.pdf
N RN-CHANNEL MOSFET JCS7HN65C MAIN CHARACTERISTICS Package ID 7.0 A VDSS 650 V Rdson-max Typ 1.05 Vgs=10V Max 1.35 Qg-typ 32 nC APPLICATIONS High frequency switching mode power supply LED Electronic ballast LED po
jcs7hn60v jcs7hn60r jcs7hn60b jcs7hn60s jcs7hn60c jcs7hn60f.pdf
N RN-CHANNEL MOSFET JCS7HN60C MAIN CHARACTERISTICS Package ID 7.0 A VDSS 600 V Rdson-max 1.3 @Vgs=10V Qg-typ 32 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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