JCS7HN65R MOSFET. Datasheet pdf. Equivalent
Type Designator: JCS7HN65R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 32 nC
trⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 251 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.35 Ohm
Package: TO252
JCS7HN65R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
JCS7HN65R Datasheet (PDF)
jcs7hn65v jcs7hn65r jcs7hn65b jcs7hn65s jcs7hn65c jcs7hn65f.pdf
N RN-CHANNEL MOSFET JCS7HN65C MAIN CHARACTERISTICS Package ID 7.0 A VDSS 650 V Rdson-max Typ 1.05 Vgs=10V Max 1.35 Qg-typ 32 nC APPLICATIONS High frequency switching mode power supply LED Electronic ballast LED po
jcs7hn60v jcs7hn60r jcs7hn60b jcs7hn60s jcs7hn60c jcs7hn60f.pdf
N RN-CHANNEL MOSFET JCS7HN60C MAIN CHARACTERISTICS Package ID 7.0 A VDSS 600 V Rdson-max 1.3 @Vgs=10V Qg-typ 32 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
