JCS7HN65V Datasheet. Specs and Replacement

Type Designator: JCS7HN65V

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 32 nC

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 251 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.35 Ohm

Package: TO251

JCS7HN65V substitution

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JCS7HN65V datasheet

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Detailed specifications: JCS7HN60R, JCS7HN60S, JCS7HN60V, JCS7HN65B, JCS7HN65C, JCS7HN65F, JCS7HN65R, JCS7HN65S, IRFZ44, JCS7N60BB, JCS7N60CB, JCS7N60FB, JCS7N60SB, JCS7N65BB, JCS7N65SB, JCS7N80BH, JCS7N80CH

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs