JCS7N60SB Datasheet. Specs and Replacement

Type Designator: JCS7N60SB

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 142 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 25 nC

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO-263

JCS7N60SB substitution

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JCS7N60SB datasheet

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JCS7N60SB

N R N-CHANNEL MOSFET JCS7N60B MAIN CHARACTERISTICS Package ID 7.0 A VDSS 600 V Rdson-max 1.2 @Vgs=10V Qg-typ 25 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge L... See More ⇒

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JCS7N60SB

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JCS7N60SB

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JCS7N60SB

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Detailed specifications: JCS7HN65C, JCS7HN65F, JCS7HN65R, JCS7HN65S, JCS7HN65V, JCS7N60BB, JCS7N60CB, JCS7N60FB, IRFB4110, JCS7N65BB, JCS7N65SB, JCS7N80BH, JCS7N80CH, JCS7N80FH, JCS7N80SH, JCS88N75I, JCS8N60BB

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs