JCS7N80SH Datasheet and Replacement
Type Designator: JCS7N80SH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 195 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 105 nS
Cossⓘ - Output Capacitance: 129 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
Package: TO-263
JCS7N80SH substitution
JCS7N80SH Datasheet (PDF)
jcs7n80fh jcs7n80ch jcs7n80bh jcs7n80sh.pdf

N RN-CHANNEL MOSFET JCS7N80H Package MAIN CHARACTERISTICS ID 7A VDSS 800V Rdson-max 1.6 Vgs=10V Qg-Typ 39nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED po
jcs7n80fc.pdf

N R N-CHANNEL MOSFET JCS7N80C Package MAIN CHARACTERISTICS 7A ID 800 V VDSS Rdson-max 1.8 @Vgs=10VQg-typ 32nC APPLICATIONS Switched mode power suppliesy Electronic ballast FEATURES Low gate charge
jcs7n70v jcs7n70r jcs7n70c jcs7n70f jcs7n70s jcs7n70b.pdf

N RN-CHANNEL MOSFET JCS7N70C Package MAIN CHARACTERISTICS ID 7.0 A VDSS 700 V Rdson-max 1.6 @Vgs=10V Qg-typ 31 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEATUR
jcs7n60s jcs7n60b jcs7n60c jcs7n60f.pdf

N lSX:_W:WHe^vfSO{RN-CHANNEL MOSFETJCS7N60 \ Package ;NSpe MAIN CHARACTERISTICS ID 7.0 A 600 V VDSS 1.2 &! Rdson@Vgs=10V54 nC Qg APPLICATIONS (u High efficiency switch
Datasheet: JCS7N60CB , JCS7N60FB , JCS7N60SB , JCS7N65BB , JCS7N65SB , JCS7N80BH , JCS7N80CH , JCS7N80FH , IRFB4227 , JCS88N75I , JCS8N60BB , JCS8N60BC , JCS8N60CB , JCS8N60CC , JCS8N60FB , JCS8N60FC , JCS8N60RC .
Keywords - JCS7N80SH MOSFET datasheet
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