All MOSFET. STH8N80 Datasheet

 

STH8N80 Datasheet and Replacement


   Type Designator: STH8N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 280 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO218
 

 STH8N80 substitution

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STH8N80 Datasheet (PDF)

 ..1. Size:406K  1
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STH8N80

 9.1. Size:344K  1
 sth8na60 sth8na60fi.pdf pdf_icon

STH8N80

 9.2. Size:323K  st
 stw8nb90 sth8nb90fi.pdf pdf_icon

STH8N80

STW8NB90STH8NB90FIN-CHANNEL 900V - 1.1 - 8 A TO-247/ISOWATT218PowerMesh MOSFETTYPE VDSS RDS(on) IDSTW8NB90 900 V

 9.3. Size:128K  njs
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STH8N80

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Keywords - STH8N80 MOSFET datasheet

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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