STH8N80 PDF and Equivalents Search

 

STH8N80 Specs and Replacement

Type Designator: STH8N80

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 125 nC

tr ⓘ - Rise Time: 280 nS

Cossⓘ - Output Capacitance: 270 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO218

STH8N80 substitution

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STH8N80 datasheet

 9.1. Size:344K  1
sth8na60 sth8na60fi.pdf pdf_icon

STH8N80

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 9.2. Size:323K  st
stw8nb90 sth8nb90fi.pdf pdf_icon

STH8N80

STW8NB90 STH8NB90FI N-CHANNEL 900V - 1.1 - 8 A TO-247/ISOWATT218 PowerMesh MOSFET TYPE VDSS RDS(on) ID STW8NB90 900 V ... See More ⇒

 9.3. Size:128K  njs
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STH8N80

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Detailed specifications: STH7N90 , STH7N90FI , STH7NA60 , STH7NA60FI , STH7NA80 , STH7NA80FI , STH80N05 , STH80N05FI , RU7088R , STH8N80FI , STH8NA60 , STH8NA60FI , STH9N80 , STH9N80FI , STH9NA60 , STHV102 , STHV102FI .

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 


 
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