All MOSFET. STH8NA60 Datasheet

 

STH8NA60 Datasheet and Replacement


   Type Designator: STH8NA60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO218
 

 STH8NA60 substitution

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STH8NA60 Datasheet (PDF)

 ..1. Size:344K  1
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STH8NA60

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 sth8na80fi stw8na80.pdf pdf_icon

STH8NA60

 9.1. Size:406K  1
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STH8NA60

 9.2. Size:323K  st
 stw8nb90 sth8nb90fi.pdf pdf_icon

STH8NA60

STW8NB90STH8NB90FIN-CHANNEL 900V - 1.1 - 8 A TO-247/ISOWATT218PowerMesh MOSFETTYPE VDSS RDS(on) IDSTW8NB90 900 V

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Datasheet: STH7NA60 , STH7NA60FI , STH7NA80 , STH7NA80FI , STH80N05 , STH80N05FI , STH8N80 , STH8N80FI , HY1906P , STH8NA60FI , STH9N80 , STH9N80FI , STH9NA60 , STHV102 , STHV102FI , STHV82 , STHV82FI .

History: HAT2046R

Keywords - STH8NA60 MOSFET datasheet

 STH8NA60 cross reference
 STH8NA60 equivalent finder
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