STH8NA60 Specs and Replacement
Type Designator: STH8NA60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 3.75 V
Qg ⓘ - Total Gate Charge: 58 nC
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 175 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO218
STH8NA60 substitution
- MOSFET ⓘ Cross-Reference Search
STH8NA60 datasheet
stw8nb90 sth8nb90fi.pdf
STW8NB90 STH8NB90FI N-CHANNEL 900V - 1.1 - 8 A TO-247/ISOWATT218 PowerMesh MOSFET TYPE VDSS RDS(on) ID STW8NB90 900 V ... See More ⇒
Detailed specifications: STH7NA60 , STH7NA60FI , STH7NA80 , STH7NA80FI , STH80N05 , STH80N05FI , STH8N80 , STH8N80FI , AOD4184A , STH8NA60FI , STH9N80 , STH9N80FI , STH9NA60 , STHV102 , STHV102FI , STHV82 , STHV82FI .
History: STH80N05
Keywords - STH8NA60 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: STH80N05
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