All MOSFET. JCS9N90BT Datasheet

 

JCS9N90BT Datasheet and Replacement


   Type Designator: JCS9N90BT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 123.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 116 nS
   Cossⓘ - Output Capacitance: 189 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.35 Ohm
   Package: TO-262N
      - MOSFET Cross-Reference Search

 

JCS9N90BT Datasheet (PDF)

 ..1. Size:1487K  jilin sino
 jcs9n90ft jcs9n90wt jcs9n90abt jcs9n90bt.pdf pdf_icon

JCS9N90BT

N RN-CHANNEL MOSFET JCS9N90T Package MAIN CHARACTERISTICS ID 9 A VDSS 900 V Rdson-Max 1.35 Vgs=10V Qg 43 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED

 7.1. Size:898K  jilin sino
 jcs9n90ft.pdf pdf_icon

JCS9N90BT

N RN-CHANNEL MOSFET JCS9N90FT Package MAIN CHARACTERISTICS ID 9 A VDSS 900 V Rdson 1.35 @Vgs=10VQg 43 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power

 8.1. Size:527K  jilin sino
 jcs9n95fa jcs9n95ca jcs9n95wa.pdf pdf_icon

JCS9N90BT

N RN-CHANNEL MOSFET JCS9N95A MAIN CHARACTERISTICS Package ID 9.0 A VDSS 950 V RdsonVgs=10V 1.3 -MAX Qg-Typ 39.92 APPLICATIONS High efficiency switch mode . power supplies Electronic lamp ballasts based on half bridge LED power supplie

 9.1. Size:1721K  jilin sino
 jcs9n50ct jcs9n50ft.pdf pdf_icon

JCS9N90BT

N RN-CHANNEL MOSFET JCS9N50T Package MAIN CHARACTERISTICS ID 9 A VDSS 500 V Rdson-max 0.75 @Vgs=10V Qg-typ 29 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge

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History: TK2P60D | 3UT40 | IRFBG20

Keywords - JCS9N90BT MOSFET datasheet

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