JS65R170BM MOSFET. Datasheet pdf. Equivalent
Type Designator: JS65R170BM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 151 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 59 nS
Cossⓘ - Output Capacitance: 65 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
Package: TO-262
JS65R170BM Transistor Equivalent Substitute - MOSFET Cross-Reference Search
JS65R170BM Datasheet (PDF)
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N R N-CHANNEL MOSFETJS65R170M Package MAIN CHARACTERISTICS 20A ID 650 V VDSS Rdson-max0.17 @Vgs=10V 38.5 nC Qg-typ APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply
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