STH8NA60FI MOSFET. Datasheet pdf. Equivalent

   Type Designator: STH8NA60FI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.75 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 58 nC
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: ISOWATT218

Datasheet: STH7NA60FI , STH7NA80 , STH7NA80FI , STH80N05 , STH80N05FI , STH8N80 , STH8N80FI , STH8NA60 , AO3407 , STH9N80 , STH9N80FI , STH9NA60 , STHV102 , STHV102FI , STHV82 , STHV82FI , STK12N05L .