All MOSFET. JS65R170FM Datasheet

 

JS65R170FM MOSFET. Datasheet pdf. Equivalent


   Type Designator: JS65R170FM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 38.5 nC
   trⓘ - Rise Time: 59 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
   Package: TO-220MF

 JS65R170FM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JS65R170FM Datasheet (PDF)

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 js65r170fm js65r170wm js65r170abm js65r170cm js65r170bm js65r170sm.pdf

JS65R170FM JS65R170FM

N R N-CHANNEL MOSFETJS65R170M Package MAIN CHARACTERISTICS 20A ID 650 V VDSS Rdson-max0.17 @Vgs=10V 38.5 nC Qg-typ APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: MMF60R115PTH

 

 
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