All MOSFET. JS65R170FM Datasheet

 

JS65R170FM Datasheet and Replacement


   Type Designator: JS65R170FM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 38.5 nC
   trⓘ - Rise Time: 59 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
   Package: TO-220MF
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JS65R170FM Datasheet (PDF)

 ..1. Size:1822K  jilin sino
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JS65R170FM

N R N-CHANNEL MOSFETJS65R170M Package MAIN CHARACTERISTICS 20A ID 650 V VDSS Rdson-max0.17 @Vgs=10V 38.5 nC Qg-typ APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

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History: BSZ035N03LSG | SVF9N90F

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