KNH9130A MOSFET. Datasheet pdf. Equivalent
Type Designator: KNH9130A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 40 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 95 nC
trⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 250 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: TO3P
KNH9130A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KNH9130A Datasheet (PDF)
knp9130a knh9130a.pdf
40A300VKNX9130AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.General Features Proprietary NewPlanar Technology R =100m@V =10VDS(ON),typ. GS LowGate Charge Minimize Switching Loss Fast Recovery Body Diode2.Applications DC-DCConverters DC-ACInverters for UPS SMPSand Motor controls3. PinconfigurationPin Function1 Gate2 Drain3
knp9120a knh9120a.pdf
40A200VN-CHANNELMOSFETKNX9120AKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features Proprietary NewPlanar Technology RDS(ON)=50m (typ.)@VGS=10V LowGate Charge Minimize Switching Loss Fast Recovery Body Diode2. Application DC-DCConverters DC-ACInverters for UPS SMPSand Motor controls3. PinconfigurationPin Function1 Gate2 Drain3 Source4 Dra
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