All MOSFET. KNP2708A Datasheet

 

KNP2708A Datasheet and Replacement


   Type Designator: KNP2708A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 313 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 160 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 135 nS
   Cossⓘ - Output Capacitance: 650 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
   Package: TO220
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KNP2708A Datasheet (PDF)

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KNP2708A

160A80VKNX2708AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.General Features Proprietary NewTrenchTechnology R =4.0m@V =10VDS(ON),typ. GS LowGate Charge Minimize Switching Loss Fast Recovery Body Diode2.Applications High efficiency DC/DCconverters Synchronous Rectification UPSInverter3. PinconfigurationPin Function1 Gate2 D

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: NCE65N760K | BSS84W | BSC042N03MS | BUZ11A | AO4264E | BSC094N06LS5 | NP82N06MLG

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