KNP2910A MOSFET. Datasheet pdf. Equivalent
Type Designator: KNP2910A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 300 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 130 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 130 nC
Rise Time (tr): 91 nS
Drain-Source Capacitance (Cd): 630 pF
Maximum Drain-Source On-State Resistance (Rds): 0.007 Ohm
Package: TO220
KNP2910A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KNP2910A Datasheet (PDF)
knb2910a knp2910a knh2910a.pdf
130A100VKNX2910AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Applications High efficiency synchronous rectification in SMPS High speed power switching2. Features R =5.0m @V =10 VDS(on) GSSuper high dense cell design Ultra lowOn-Resistance 100%avalanchetested Lead Free and Green devices available (RoHSCompliant)3. Pinconfiguratio
knp2915a.pdf
130A150VN-CHANNELMOSFET KNX2915AKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features RDS(ON)=10m( typ.)@VGS=10V Uses CRM(CQ) advancedTrench technology Extremely lowon-resistance RDS(on) Excellent QgxRDS(on) product(FOM) Qualified according to JEDECcriteria2. Application Motor control and drive Battery management UPS(UninterrupiblePower Supplies)
knp2915a knb2915a.pdf
130A150VN-CHANNEL MOSFET KNX2915AKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features RDS(ON)= 10m( typ.)@ VGS=10V Uses CRM(CQ) advanced Trench technology Extremely low on-resistance RDS(on) Excellent QgxRDS(on) product(FOM) Qualified according to JEDEC criteria2. Application Motor control and drive Battery management UPS
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP450 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
