KNP2910A Datasheet. Specs and Replacement

Type Designator: KNP2910A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 130 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 91 nS

Cossⓘ - Output Capacitance: 630 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: TO220

KNP2910A substitution

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KNP2910A datasheet

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KNP2910A

130A 100V KNX2910A N-CHANNELMOSFET KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1.Applications High efficiency synchronous rectification in SMPS High speed power switching 2. Features R =5.0m @V =10 V DS(on) GS Super high dense cell design Ultra lowOn-Resistance 100%avalanchetested Lead Free and Green devices available (RoHSCompliant) 3. Pinconfiguratio... See More ⇒

 8.1. Size:334K  kia
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KNP2910A

130A 150V N-CHANNELMOSFET KNX2915A KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1. Features RDS(ON)=10m ( typ.)@VGS=10V Uses CRM(CQ) advancedTrench technology Extremely lowon-resistance RDS(on) Excellent QgxRDS(on) product(FOM) Qualified according to JEDECcriteria 2. Application Motor control and drive Battery management UPS(UninterrupiblePower Supplies)... See More ⇒

 8.2. Size:429K  kia
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KNP2910A

130A 150V N-CHANNEL MOSFET KNX2915A KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1. Features RDS(ON)= 10m ( typ.)@ VGS=10V Uses CRM(CQ) advanced Trench technology Extremely low on-resistance RDS(on) Excellent QgxRDS(on) product(FOM) Qualified according to JEDEC criteria 2. Application Motor control and drive Battery management UPS... See More ⇒

Detailed specifications: KNH9130A, KNL42150A, KNP1906A, KNP2404A, KNP2708A, KNP2803A, KNP2804A, KNP2804C, 20N50, KNP2915A, KNP3204A, KNP3206A, KNP3208A, KNP3306A, KNP3508A, KNP3706A, KNP4360A

Keywords - KNP2910A MOSFET specs

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