STH9N80FI Specs and Replacement
Type Designator: STH9N80FI
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V
Qg ⓘ - Total Gate Charge: 125 nC
tr ⓘ - Rise Time: 280 nS
Cossⓘ - Output Capacitance: 270 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: ISOWATT218
STH9N80FI substitution
- MOSFET ⓘ Cross-Reference Search
STH9N80FI datasheet
sth9na80fi.pdf
STW9NA80 STH9NA80FI N - CHANNEL 800V - 0.85 - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STW9NA80 800 V ... See More ⇒
sth9na60fi.pdf
STW9NA60 STH9NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STW9NA60 600 V ... See More ⇒
Detailed specifications: STH7NA80FI , STH80N05 , STH80N05FI , STH8N80 , STH8N80FI , STH8NA60 , STH8NA60FI , STH9N80 , IRFP064N , STH9NA60 , STHV102 , STHV102FI , STHV82 , STHV82FI , STK12N05L , STK12N06L , STK14N05 .
Keywords - STH9N80FI MOSFET specs
STH9N80FI cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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