KNP3706A MOSFET. Datasheet pdf. Equivalent
Type Designator: KNP3706A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 80 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 33 nC
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 255 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TO220
KNP3706A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KNP3706A Datasheet (PDF)
..1. Size:198K kia
knp3706a knd3706a.pdf
knp3706a knd3706a.pdf
50A60VKNX3706AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Features R =9m@V 10VDS(ON),typ. GS= 100%EASguaranteed Super lowgate charge Excellent Cdv/dt effect decline Advanced high cell density trench technology2.DescriptionThe KNX3706Ais the high cell density trenched N-ch MOSFET,which provide excellent R andDS(ON)gate charge for
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