All MOSFET. KNP3706A Datasheet

 

KNP3706A Datasheet and Replacement


   Type Designator: KNP3706A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 255 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO220
 

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KNP3706A Datasheet (PDF)

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KNP3706A

50A60VKNX3706AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Features R =9m@V 10VDS(ON),typ. GS= 100%EASguaranteed Super lowgate charge Excellent Cdv/dt effect decline Advanced high cell density trench technology2.DescriptionThe KNX3706Ais the high cell density trenched N-ch MOSFET,which provide excellent R andDS(ON)gate charge for

Datasheet: KNP2804C , KNP2910A , KNP2915A , KNP3204A , KNP3206A , KNP3208A , KNP3306A , KNP3508A , AO3401 , KNP4360A , KNP4540A , KNP4665A , KNP6140A , KNP6165A , KNP6165B , KNP6180A , KNP6450A .

History: 2SJ499

Keywords - KNP3706A MOSFET datasheet

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