KNP3706A Datasheet. Specs and Replacement

Type Designator: KNP3706A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 80 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 255 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: TO220

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KNP3706A datasheet

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KNP3706A

50A 60V KNX3706A N-CHANNELMOSFET KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1.Features R =9m @V 10V DS(ON),typ. GS= 100%EASguaranteed Super lowgate charge Excellent Cdv/dt effect decline Advanced high cell density trench technology 2.Description The KNX3706Ais the high cell density trenched N-ch MOSFET,which provide excellent R and DS(ON) gate charge for... See More ⇒

Detailed specifications: KNP2804C, KNP2910A, KNP2915A, KNP3204A, KNP3206A, KNP3208A, KNP3306A, KNP3508A, P60NF06, KNP4360A, KNP4540A, KNP4665A, KNP6140A, KNP6165A, KNP6165B, KNP6180A, KNP6450A

Keywords - KNP3706A MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.