All MOSFET. KNP6650A Datasheet

 

KNP6650A Datasheet and Replacement


   Type Designator: KNP6650A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 208 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: TO220
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KNP6650A Datasheet (PDF)

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KNP6650A

15A500VN-CHANNELMOSFET KNX6650AKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS`1. DescriptionTheKNX6650A-Channel enhancement modesilicongatepower MOSFETis designedfor highvoltage,high speed power switching applications such as high efficiency switched mode power supplies, activepower factor correction, electronic lamp ballasts based on half bridge topology2. Fea

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History: 20N03L-TO252 | 2N6762JTXV

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