KNP6650A Datasheet and Replacement
Type Designator: KNP6650A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 140 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 15 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 208 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
Package: TO220
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KNP6650A Datasheet (PDF)
knf6650a knp6650a.pdf

15A500VN-CHANNELMOSFET KNX6650AKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS`1. DescriptionTheKNX6650A-Channel enhancement modesilicongatepower MOSFETis designedfor highvoltage,high speed power switching applications such as high efficiency switched mode power supplies, activepower factor correction, electronic lamp ballasts based on half bridge topology2. Fea
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 20N03L-TO252 | 2N6762JTXV
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History: 20N03L-TO252 | 2N6762JTXV



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