STHV102 Specs and Replacement
Type Designator: STHV102
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 130 nS
Cossⓘ - Output Capacitance: 165 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
Package: TO218
STHV102 substitution
STHV102 datasheet
sthv102.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor STHV102 FEATURES With TO-3PN packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER... See More ⇒
Detailed specifications: STH80N05FI , STH8N80 , STH8N80FI , STH8NA60 , STH8NA60FI , STH9N80 , STH9N80FI , STH9NA60 , IRF730 , STHV102FI , STHV82 , STHV82FI , STK12N05L , STK12N06L , STK14N05 , STK14N06 , STK14N10 .
Keywords - STHV102 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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