All MOSFET. STHV102 Datasheet

 

STHV102 Datasheet and Replacement


   Type Designator: STHV102
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 4.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 80 nC
   tr ⓘ - Rise Time: 130 nS
   Cossⓘ - Output Capacitance: 165 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
   Package: TO218
 

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STHV102 Datasheet (PDF)

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STHV102

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STHV102

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STHV102

INCHANGE Semiconductorisc N-Channel MOSFET Transistor STHV102FEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

Datasheet: STH80N05FI , STH8N80 , STH8N80FI , STH8NA60 , STH8NA60FI , STH9N80 , STH9N80FI , STH9NA60 , BS170 , STHV102FI , STHV82 , STHV82FI , STK12N05L , STK12N06L , STK14N05 , STK14N06 , STK14N10 .

History: IXFN26N90 | ITF87012SVT

Keywords - STHV102 MOSFET datasheet

 STHV102 cross reference
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