KNU4820B Datasheet. Specs and Replacement

Type Designator: KNU4820B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 94 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO251

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KNU4820B datasheet

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KNU4820B

9.0A 200V N-CHANNELMOSFET KNX4820B KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1. Description TheKNX4820B-Channel enhancement modesilicongatepower MOSFETis designedfor highvoltage, high speed power switching applications such as high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology 2. Fe... See More ⇒

Detailed specifications: KNP6165B, KNP6180A, KNP6450A, KNP6650A, KNP7150A, KNP9120A, KNP9130A, KNU4360A, K2611, KNU6610A, KNU8103A, KNU8606A, KNY2803A, KNY3204A, KNY3303A, KNY3403A, KNY3404C

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