KNU8103A Datasheet and Replacement
Type Designator: KNU8103A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9.8 nS
Cossⓘ - Output Capacitance: 81 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: TO251
KNU8103A substitution
KNU8103A Datasheet (PDF)
knd8103a knu8103a.pdf

30A30VKNX8103AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThe KIA-8103Ais the highest performance trench N-ch MOSFETs with extreme high celldensity,which provide excellent RDSON and gate charge for most of the synchronous buck converterapplications.The KIA30N03Bmeet the RoHSand Green Product requirenment,100%EASguaranteed withfull
Datasheet: KNP6450A , KNP6650A , KNP7150A , KNP9120A , KNP9130A , KNU4360A , KNU4820B , KNU6610A , MMD60R360PRH , KNU8606A , KNY2803A , KNY3204A , KNY3303A , KNY3403A , KNY3404C , KNY3406C , KNY3703A .
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