KNY3303A MOSFET. Datasheet pdf. Equivalent
Type Designator: KNY3303A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 69 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 90 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 24 nC
trⓘ - Rise Time: 19.5 nS
Cossⓘ - Output Capacitance: 400 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: DFN5X6
KNY3303A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KNY3303A Datasheet (PDF)
kny3303a.pdf
90A30VKNX3303AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSEMICONDUCTORSS1.DescriptionThis Power MOSFET is produced using KIA`s advanced planar stripe DMOS technology. Thisadvanced technology has been especially tailored to minimize on-state resistance, provide superiorswitching performance, and withstand high energy pulse in the avalanche and commutation m
kng3303a kny3303a.pdf
90A30VKNX3303AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSEMICONDUCTORSS1.DescriptionThis Power MOSFET is produced using KIA`s advanced planar stripe DMOS technology. Thisadvanced technology has been especially tailored to minimize on-state resistance, provide superiorswitching performance, and withstand high energy pulse in the avalanche and commutation m
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: APT6025BVFR | HGM059N08AL | HSS2312A | SI2304 | FW811 | SI2305DS
History: APT6025BVFR | HGM059N08AL | HSS2312A | SI2304 | FW811 | SI2305DS
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918