All MOSFET. KNY3406C Datasheet

 

KNY3406C MOSFET. Datasheet pdf. Equivalent


   Type Designator: KNY3406C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 41 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 55 nC
   trⓘ - Rise Time: 41 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: DFN5X6

 KNY3406C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KNY3406C Datasheet (PDF)

 ..1. Size:193K  1
kny3406c.pdf

KNY3406C
KNY3406C

80A60VKNX3406CN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =7.0m@V =10VDS(ON),typ. GS Super lowgate charge Excellent Cdv/dt effect decline Advanced high cell density trench technology2. Applications Motor control and drive Battery management UPS(Uninterrupible Power Supplies)3. PinconfigurationPin Function4 Gate

 ..2. Size:193K  kia
kny3406c.pdf

KNY3406C
KNY3406C

80A60VKNX3406CN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =7.0m@V =10VDS(ON),typ. GS Super lowgate charge Excellent Cdv/dt effect decline Advanced high cell density trench technology2. Applications Motor control and drive Battery management UPS(Uninterrupible Power Supplies)3. PinconfigurationPin Function4 Gate

 8.1. Size:306K  1
kny3404c.pdf

KNY3406C
KNY3406C

80A40VKNX3404CN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThe KND3404C is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON andgate charge for most of the synchronous buck converter applications. The KND3404Cmeet the RoHs andGreen Product requirement 100%EASGuaranteed with full functionreliability approved.

 8.2. Size:281K  1
kny3403b.pdf

KNY3406C
KNY3406C

85A 30VN-CHANNEL MOSFETKNX3403BKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. FeaturesKNX3403B is an N-channel enhancement mode power Mosfet field effect transistor which is producedusing KIAs LVMosfet technology.the improved process and cell structure have been especially tailored tominimize on-state resistance,provide superior switching performance. This devi

 8.3. Size:872K  1
kny3403a.pdf

KNY3406C
KNY3406C

85A30VN-CHANNEL MOSFETKNX3403AKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =4.5m (typ.)@ V =10VDS(on) GS Lead free and Green Device Available Low Rds-on to Minimize Conductive Loss High avalanche Current2. Application Load Switch SMPS3. Pin configurationPin PinFunctionDFN5*6 TO-2524 1 Gate5,6,7,8 2 Drain

 8.4. Size:306K  kia
knd3404c kny3404c.pdf

KNY3406C
KNY3406C

80A40VKNX3404CN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThe KND3404C is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON andgate charge for most of the synchronous buck converter applications. The KND3404Cmeet the RoHs andGreen Product requirement 100%EASGuaranteed with full functionreliability approved.

 8.5. Size:872K  kia
knd3403a kny3403a.pdf

KNY3406C
KNY3406C

85A30VN-CHANNEL MOSFETKNX3403AKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =4.5m (typ.)@ V =10VDS(on) GS Lead free and Green Device Available Low Rds-on to Minimize Conductive Loss High avalanche Current2. Application Load Switch SMPS3. Pin configurationPin PinFunctionDFN5*6 TO-2524 1 Gate5,6,7,8 2 Drain

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