KNY3406C MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: KNY3406C
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 41 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 80 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 55 nC
trⓘ - Время нарастания: 41 ns
Cossⓘ - Выходная емкость: 200 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0085 Ohm
Тип корпуса: DFN5X6
KNY3406C Datasheet (PDF)
kny3406c.pdf
80A60VKNX3406CN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =7.0m@V =10VDS(ON),typ. GS Super lowgate charge Excellent Cdv/dt effect decline Advanced high cell density trench technology2. Applications Motor control and drive Battery management UPS(Uninterrupible Power Supplies)3. PinconfigurationPin Function4 Gate
kny3406c.pdf
80A60VKNX3406CN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =7.0m@V =10VDS(ON),typ. GS Super lowgate charge Excellent Cdv/dt effect decline Advanced high cell density trench technology2. Applications Motor control and drive Battery management UPS(Uninterrupible Power Supplies)3. PinconfigurationPin Function4 Gate
kny3404c.pdf
80A40VKNX3404CN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThe KND3404C is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON andgate charge for most of the synchronous buck converter applications. The KND3404Cmeet the RoHs andGreen Product requirement 100%EASGuaranteed with full functionreliability approved.
kny3403b.pdf
85A 30VN-CHANNEL MOSFETKNX3403BKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. FeaturesKNX3403B is an N-channel enhancement mode power Mosfet field effect transistor which is producedusing KIAs LVMosfet technology.the improved process and cell structure have been especially tailored tominimize on-state resistance,provide superior switching performance. This devi
kny3403a.pdf
85A30VN-CHANNEL MOSFETKNX3403AKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =4.5m (typ.)@ V =10VDS(on) GS Lead free and Green Device Available Low Rds-on to Minimize Conductive Loss High avalanche Current2. Application Load Switch SMPS3. Pin configurationPin PinFunctionDFN5*6 TO-2524 1 Gate5,6,7,8 2 Drain
knd3404c kny3404c.pdf
80A40VKNX3404CN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThe KND3404C is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON andgate charge for most of the synchronous buck converter applications. The KND3404Cmeet the RoHs andGreen Product requirement 100%EASGuaranteed with full functionreliability approved.
knd3403a kny3403a.pdf
85A30VN-CHANNEL MOSFETKNX3403AKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =4.5m (typ.)@ V =10VDS(on) GS Lead free and Green Device Available Low Rds-on to Minimize Conductive Loss High avalanche Current2. Application Load Switch SMPS3. Pin configurationPin PinFunctionDFN5*6 TO-2524 1 Gate5,6,7,8 2 Drain
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F