All MOSFET. STHV102FI Datasheet

 

STHV102FI Datasheet and Replacement


   Type Designator: STHV102FI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 130 nS
   Cossⓘ - Output Capacitance: 165 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
   Package: ISOWATT218
 

 STHV102FI substitution

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STHV102FI Datasheet (PDF)

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STHV102FI

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STHV102FI

 7.2. Size:209K  inchange semiconductor
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STHV102FI

INCHANGE Semiconductorisc N-Channel MOSFET Transistor STHV102FEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

Datasheet: STH8N80 , STH8N80FI , STH8NA60 , STH8NA60FI , STH9N80 , STH9N80FI , STH9NA60 , STHV102 , IRFZ44N , STHV82 , STHV82FI , STK12N05L , STK12N06L , STK14N05 , STK14N06 , STK14N10 , STK16N10L .

History: STH9N80FI

Keywords - STHV102FI MOSFET datasheet

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