All MOSFET. KNY3703A Datasheet

 

KNY3703A Datasheet and Replacement


   Type Designator: KNY3703A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 46 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: DFN5X6
 

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KNY3703A Datasheet (PDF)

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KNY3703A

50A, 30VN-CHANNELMOSFETKNX3703AKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Features R (typ.)=7.5m,VGS=10VDS(on) Advanced trenchprocess technology High density cell design for ultra lowon-resistance Fully characterized avalanche voltage and current2.Applications High Frequency Point-of-LoadSynchronous Buck Converter for MB/NB/UMPC/VGA NetworkingDC-DCP

Datasheet: KNU8103A , KNU8606A , KNY2803A , KNY3204A , KNY3303A , KNY3403A , KNY3404C , KNY3406C , IRFZ44N , KPE4403A2 , KPE4703A , S-L2N7002DW1T1G , L2N7002FLT1G , L2N7002KDW1T1G , L2N7002KDW1T3G , L2N7002KLT1G , L2N7002KN3T5G .

History: APQ84SN06A | IXFT30N60X

Keywords - KNY3703A MOSFET datasheet

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