KNY3703A MOSFET. Datasheet pdf. Equivalent
Type Designator: KNY3703A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 46 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 10 nC
trⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 270 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: DFN5X6
KNY3703A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KNY3703A Datasheet (PDF)
..1. Size:242K kia
kng3703a kny3703a.pdf
kng3703a kny3703a.pdf
50A, 30VN-CHANNELMOSFETKNX3703AKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Features R (typ.)=7.5m,VGS=10VDS(on) Advanced trenchprocess technology High density cell design for ultra lowon-resistance Fully characterized avalanche voltage and current2.Applications High Frequency Point-of-LoadSynchronous Buck Converter for MB/NB/UMPC/VGA NetworkingDC-DCP
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