All MOSFET. L2N7002KLT1G Datasheet

 

L2N7002KLT1G Datasheet and Replacement


   Type Designator: L2N7002KLT1G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.32 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.4 nS
   Cossⓘ - Output Capacitance: 3 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
   Package: SOT23
 

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L2N7002KLT1G Datasheet (PDF)

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L2N7002KLT1G

LESHAN RADIO COMPANY, LTD.Small Signal MOSFET L2N7002KLT1G380 mAmps, 60 Volts NChannel SOT23 S-L2N7002KLT1GFEATURES31)ESD Protected2)Low RDS(on)13)Surface Mount Package24)This is a Pb-Free Device5)We declare that the material of product compliant withSOT23RoHS requirements and Halogen Free.6) S- Prefix for Automotive and Other Applications RequiringUn

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L2N7002KLT1G

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L2N7002KLT1G

L2N7002KDW1T1GS-L2N7002KDW1T1GSmall Signal MOSFET380 mAmps, 60 Volts NChannel SC-881. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC88(SOT-363) qualified and PPAP capable.ESD Protected2. D

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L2N7002KLT1G

JMTL2N7002KSDescriptionJMT N-channel MOSFETFeatures Application V =60V, I =0.3A Battery Operated SystemsDS DR

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Datasheet: KNY3406C , KNY3703A , KPE4403A2 , KPE4703A , S-L2N7002DW1T1G , L2N7002FLT1G , L2N7002KDW1T1G , L2N7002KDW1T3G , 50N06 , L2N7002KN3T5G , S-L2N7002LT1G , L2N7002M3T5G , S-L2N7002M3T5G , L2N7002SDW1T1G , L2N7002SDW1T3G , L2N7002SLT1G , L2N7002SLT3G .

History: SI1555DL-T1 | IRF9910

Keywords - L2N7002KLT1G MOSFET datasheet

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 L2N7002KLT1G replacement

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