L2SK801LT1G PDF and Equivalents Search

 

L2SK801LT1G Specs and Replacement

Type Designator: L2SK801LT1G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.225 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.31 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 10 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: SOT23

L2SK801LT1G substitution

- MOSFET ⓘ Cross-Reference Search

 

L2SK801LT1G datasheet

 ..1. Size:183K  lrc
 l2sk801lt1g.pdf pdf_icon

L2SK801LT1G

LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 310 mAmps, 60 Volts L2SK801LT1G N Channel SOT 23 3 Pb-Free Package is Available. 1 2 CASE 318, STYLE 21 MAXIMUM RATINGS SOT 23 (TO 236AB) Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain Gate Voltage (RGS = 1.0 M ) VDGR 60 Vdc 310 mAMPS Drain Current 60 VOLTS Continuous TC = 25 C (Note 1.) ID 3... See More ⇒

Detailed specifications: S-L2N7002M3T5G, L2N7002SDW1T1G, L2N7002SDW1T3G, L2N7002SLT1G, L2N7002SLT3G, L2N7002SWT1G, S-L2N7002SWT1G, S-L2SK3018WT1G, 10N60, LBSS123LT1G, S-LBSS123LT1G, LBSS138LT1G, S-LBSS138LT1G, LBSS138WT1G, S-LBSS138WT1G, LBSS139DW1T1G, LBSS139DW1T3G

Keywords - L2SK801LT1G MOSFET specs

 L2SK801LT1G cross reference

 L2SK801LT1G equivalent finder

 L2SK801LT1G pdf lookup

 L2SK801LT1G substitution

 L2SK801LT1G replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

↑ Back to Top
.