All MOSFET. L2SK801LT1G Datasheet

 

L2SK801LT1G Datasheet and Replacement


   Type Designator: L2SK801LT1G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.225 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.31 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 10 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: SOT23
 

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L2SK801LT1G Datasheet (PDF)

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L2SK801LT1G

LESHAN RADIO COMPANY, LTD.Small Signal MOSFET310 mAmps, 60 VoltsL2SK801LT1GNChannel SOT233 Pb-Free Package is Available.12CASE 318, STYLE 21MAXIMUM RATINGSSOT 23 (TO236AB)Rating Symbol Value UnitDrainSource Voltage VDSS 60 VdcDrainGate Voltage (RGS = 1.0 M) VDGR 60 Vdc 310 mAMPSDrain Current 60 VOLTS Continuous TC = 25C (Note 1.) ID 3

Datasheet: S-L2N7002M3T5G , L2N7002SDW1T1G , L2N7002SDW1T3G , L2N7002SLT1G , L2N7002SLT3G , L2N7002SWT1G , S-L2N7002SWT1G , S-L2SK3018WT1G , IRFB4227 , LBSS123LT1G , S-LBSS123LT1G , LBSS138LT1G , S-LBSS138LT1G , LBSS138WT1G , S-LBSS138WT1G , LBSS139DW1T1G , LBSS139DW1T3G .

History: IXTM2N100 | ELM14430AA | IXTH6N150 | RJK0629DPE | VS3622AD | MPSY65M390 | HF16N10

Keywords - L2SK801LT1G MOSFET datasheet

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