SLD3101 Datasheet and Replacement
Type Designator: SLD3101
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 430 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 125 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
Package: TO252
SLD3101 substitution
SLD3101 Datasheet (PDF)
sld3101.pdf

LEAD FREEPbRoHS SLD3101430V N-Channel MOSFETGeneral Description Features - 11A, 430V, RDS(on)typ. = 0.55@VGS = 10 V - Low gate charge ( typical 23nC)This Power MOSFET is produced using Maple semis - High ruggednessadvanced trench MOSFET technology. - Fast switchingThis advanced technology has been especially tailored - 100% avalanche testedto minimize on-stat
Datasheet: LBSS8402DW1T1G , S-LBSS8402DW1T1G , LBSS84DW1T1G , S-LBSS84DW1T1G , LBSS84ELT1G , S-LBSS84ELT1G , SLD2N65UZ , SLU2N65UZ , AON7410 , SLD5N50S2 , SLU5N50S2 , SLD5N65S , SLU5N65S , SLD60R380S2 , SLU60R380S2 , SLD60R650S2 , SLU60R650S2 .
History: PHD16N03LT | SQ4942EY | SM4913TSK | HFH7N80 | HM19N40 | NCE65N260D | BLP012N08-T
Keywords - SLD3101 MOSFET datasheet
SLD3101 cross reference
SLD3101 equivalent finder
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History: PHD16N03LT | SQ4942EY | SM4913TSK | HFH7N80 | HM19N40 | NCE65N260D | BLP012N08-T



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