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SLD3101 Specs and Replacement


   Type Designator: SLD3101
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 430 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
   Package: TO252
 

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SLD3101 datasheet

 ..1. Size:591K  maple semi
 sld3101.pdf pdf_icon

SLD3101

LEAD FREE Pb RoHS SLD3101 430V N-Channel MOSFET General Description Features - 11A, 430V, RDS(on)typ. = 0.55 @VGS = 10 V - Low gate charge ( typical 23nC) This Power MOSFET is produced using Maple semi s - High ruggedness advanced trench MOSFET technology. - Fast switching This advanced technology has been especially tailored - 100% avalanche tested to minimize on-stat... See More ⇒

Detailed specifications: LBSS8402DW1T1G , S-LBSS8402DW1T1G , LBSS84DW1T1G , S-LBSS84DW1T1G , LBSS84ELT1G , S-LBSS84ELT1G , SLD2N65UZ , SLU2N65UZ , SPP20N60C3 , SLD5N50S2 , SLU5N50S2 , SLD5N65S , SLU5N65S , SLD60R380S2 , SLU60R380S2 , SLD60R650S2 , SLU60R650S2 .

History: AGM01P15D | IPD90N04S3-H4 | P0660EI | STN4440 | AON3613

Keywords - SLD3101 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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