SLU60R380S2 Datasheet. Specs and Replacement
Type Designator: SLU60R380S2 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 89 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 38 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: TO251
SLU60R380S2 substitution
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SLU60R380S2 datasheet
sld60r380s2 slu60r380s2.pdf
SLD60R380S2/SLU60R380S2 600V N-channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 11A, 600V, RDS(on)typ= 0.3 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 22nC) This advanced technology has been especially tailored to - High ruggedness minimize conduction loss, provide superior switching - Fast switching per... See More ⇒
sld60r650s2 slu60r650s2.pdf
SLD60R650S2/SLU60R650S2 600V N-channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 7A, 600V, RDS(on)typ= 0.48 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 16nC) This advanced technology has been especially tailored to - High ruggedness minimize conduction loss, provide superior switching - Fast switching per... See More ⇒
Detailed specifications: SLD2N65UZ, SLU2N65UZ, SLD3101, SLD5N50S2, SLU5N50S2, SLD5N65S, SLU5N65S, SLD60R380S2, 5N65, SLD60R650S2, SLU60R650S2, SLD65R420S2, SLU65R420S2, SLD65R700S2, SLU65R700S2, SLD65R950S2, SLD70R420S2
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